| PART |
Description |
Maker |
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPB73N03S2L-08 SPI73N03S2L-08 SPP73N03S2L-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 8.4mOhm, 73A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 8.1mOhm, 73A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPU09P06PL SPD09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25
SIPMOS Power-Transistor
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| SPU11N10 SPD11N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB80P06P SPP80P06P |
SIPMOS Power-Transistor SIPMOS功率晶体
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 23m
|
INFINEON[Infineon Technologies AG]
|
| SPD35N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=45mOhm, 35A, NL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ344 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-218, RDSon=0.035 Ohm, 50A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPP10N10 SPB10N10 SPI10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL
SIPMOS Power-Transistor
SIPMOS功率晶体
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
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